The future sensing and data storage technologies will be based on the exploitation of the spin-orbit physics in ferromagnetic- heavy metal systems. Graphene (Gr), a single atomic layer of graphite, is considered an ideal material for room temperature spintronics because of its unique and intrinsically tuneable electronic properties. However, its technological development for this purpose relies on the capability to engineer high-quality interfaces in which the negligible intrinsic spin-orbit interaction in Gr would be modified to allow for efficient room temperature spin injection, detection, manipulation, or gating.
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